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| TetraFET D1213UK METAL GATE RF SILICON FET MECHANICAL DATA D B E 8 1 7 6 3 4 2 C A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 6W - 7.2V - 500MHz SINGLE ENDED I P H G DBC1 Package PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source DIM A B C D E F G H I J K L M N O P Q mm 6.47 0.76 45 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss Tol. .003 .003 5 .003 .003 .003 .005 .003 .003 .001 .001 .001 .003 .003 .003 .020 max PIN 5 Source PIN 6 Gate PIN 7 Gate PIN 8 Source Tol. 0.08 0.08 5 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max Inches .255 .030 45 .030 .045 .105 .462 .332 .312 .008 .025 .012 .128 .083 .250SQ .065 .005 * LOW NOISE * HIGH GAIN - 10 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 58W 40V 20V 20A -65 to 150C 200C Prelim. 7/99 D1213UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 12.5V VGS = 20V ID = 10mA VDS = 10V PO = 6W VDS = 7.2V f = 500MHz VDS = 0 VGS = -5V f = 1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 IDQ = 0.5A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 2A 0.5 1.6 10 50 20:1 40 Typ. Max. Unit V 1 1 7 mA A V S dB % -- 120 80 8 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 3C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 7/99 D1213UK 10 10 100 8 8 80 P out Drain Efficiency W W % 11 10 6 P out 6 60 4 4 40 f = 500MHz Idq = 0.5A V ds = 7.2V 9 Gain dB 8 2 f = 500MHz Idq = 0.5A V ds = 7.2V 0 0.5 1 P in W 2 20 0 0 2.5 0 0.5 1 P in W Pout Gain 7 0 1.5 2 6 2.5 1.5 2 Pout Drain Efficiency Figure 1 - Power Output and Efficiency vs. Power Input. Figure 2 - Power Output & Gain vs. Power Input. -15 -20 -25 IMD3 dBc D1213UK f 1 = 500.0 MHz f 2 = 500.1 MHz V ds = 7.2V Idq = 0.5A OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz 500 ZS ZL 2.3 - j0.4 2.1 - j1.9 -30 -35 -40 -45 0 2 4 6 8 10 P out W PEP Figure 3 - IMD vs. Output Power. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 7/99 D1213UK Typical S Parameters ! VDS = 7.2V IDQ = 0.2A # MHZ S MA R 50 !Freq MHz 70 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 mag 0.69 0.74 0.82 0.86 0.89 0.90 0.91 0.92 0.93 0.93 0.93 0.93 0.93 0.92 0.92 0.91 0.92 0.94 0.95 0.93 ang -147 -153 -161 -167 -172 -176 -179 178 174 171 168 164 162 158 155 153 151 148 144 140 S21 mag 6.8 4.5 2.5 1.6 1.2 1.0 0.7 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.4 ang 68 59 47 42 35 33 27 26 23 21 20 15 18 16 21 23 29 29 31 29 S12 mag 0.021 0.017 0.015 0.024 0.037 0.052 0.064 0.082 0.095 0.116 0.130 0.148 0.159 0.173 0.182 0.189 0.207 0.235 0.275 0.308 ang -1 10 50 78 83 87 82 82 80 77 73 66 66 60 58 56 59 59 56 52 S22 mag 0.77 0.79 0.84 0.87 0.89 0.90 0.91 0.92 0.93 0.93 0.94 0.94 0.95 0.94 0.95 0.96 0.96 0.95 0.93 0.92 ang -160 -163 -167 -169 -171 -173 -175 -177 -178 -179 180 178 177 177 176 175 173 171 170 168 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 7/99 |
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